MBR20L60CT MBRF20L60CT
http://onsemi.com
2
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
MBR20L60CT (Rated VR) TC
= 138
°C Per Diode
MBRF20L60CT (Rated VR) TC
= 123
°C Per Device
IF(AV)
10
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
240
A
Operating Junction Temperature (Note 1)
TJ
?55 to +150
°C
Storage Temperature
Tstg
65 to +175
°C
ESD Ratings: Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Maximum Repetitive Peak Avalanche Voltage
(tp
< 1
s, TJ
< 150
°C, IAR
< 51 A)
VARM
85
V
Maximum Single?Pulse Peak Avalanche Voltage
(tp
< 1
s, TJ
< 150
°C, IAR
< 51 A)
VASM
85
V
THERMAL CHARACTERISTICS
Maximum Thermal Resistance
MBR20L60CT
?
Junction
?to?Case
?
Junction
?to?Ambient
MBRF20L60CT
?
Junction
?to?Case
?
Junction
?to?Ambient
RJC
RJA
RJC
RJA
2.3
70
5.2
75
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF
= 10 A, T
C
= 25
°C)
(IF
= 10 A, T
C
= 125
°C)
(IF
= 20 A, T
C
= 25
°C)
(IF
= 20 A, T
C
= 125
°C)
vF
0.53
0.49
0.68
0.64
0.57
0.54
0.73
0.69
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC
= 25
°C)
(Rated DC Voltage, TC
= 125
°C)
iR
118
52
380
96
A
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ
< 1/R
JA.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
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